philips semiconductors product specification powermos transistor BUK444-60H general description quick reference data n-channel enhancement mode symbol parameter max. unit field-effect power transistor in a plastic full-pack envelope. v ds drain-source voltage 60 v the device is intended for use in i d drain current (dc) 21 a automotive applications, switched p tot total power dissipation 30 w mode power supplies (smps), t j junction temperature 150 ?c motor control, welding, dc/dc and r ds(on) drain-source on-state 38 m w ac/dc converters, and in general resistance purpose switching applications. pinning - sot186 pin configuration symbol pin description 1 gate 2 drain 3 source case isolated limiting values limiting values in accordance with the absolute maximum system (iec 134) symbol parameter conditions min. max. unit v ds drain-source voltage - - 60 v v dgr drain-gate voltage r gs = 20 k w -60v v gs gate-source voltage - - 30 v i d drain current (dc) t hs = 25 ?c - 21 a i d drain current (dc) t hs = 100 ?c - 13 a i dm drain current (pulse peak value) t hs = 25 ?c - 84 a p tot total power dissipation t hs = 25 ?c - 30 w t stg storage temperature - - 55 150 ?c t j junction temperature - - 150 ?c thermal resistances symbol parameter conditions typ. max. unit r th j-hs thermal resistance junction to with heatsink compound - 4.17 k/w heatsink r th j-a thermal resistance junction to 55 - k/w ambient d g s 12 3 case march 1996 1 rev 1.000
philips semiconductors product specification powermos transistor BUK444-60H static characteristics t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v (br)dss drain-source breakdown v gs = 0 v; i d = 0.25 ma 60 - - v voltage v gs(to) gate threshold voltage v ds = v gs ; i d = 1 ma 2.1 3.0 4.0 v i dss zero gate voltage drain current v ds = 60 v; v gs = 0 v; t j = 25 ?c - 1 10 m a i dss zero gate voltage drain current v ds = 60 v; v gs = 0 v; t j =125 ?c - 0.1 1.0 ma i gss gate source leakage current v gs = 30 v; v ds = 0 v - 10 100 na r ds(on) drain-source on-state v gs = 10 v; i d = 20 a - 30 38 m w resistance dynamic characteristics t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit g fs forward transconductance v ds = 25 v; i d = 20 a 7 14 - s c iss input capacitance v gs = 0 v; v ds = 25 v; f = 1 mhz - 900 1600 pf c oss output capacitance - 420 600 pf c rss feedback capacitance - 160 275 pf t d on turn-on delay time v dd = 30 v; i d = 3 a; - 15 30 ns t r turn-on rise time v gs = 10 v; r gs = 50 w ; - 55 90 ns t d off turn-off delay time r gen = 50 w - 75 125 ns t f turn-off fall time - 60 100 ns l d internal drain inductance measured from drain lead 6 mm - 4.5 - nh from package to centre of die l s internal source inductance measured from source lead 6 mm - 7.5 - nh from package to source bond pad isolation limiting value & characteristic t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit v isol repetitive peak voltage from all r.h. 65% ; clean and dustfree - 1500 v three terminals to external heatsink c isol capacitance from t2 to external f = 1 mhz - 12 - pf heatsink reverse diode limiting values and characteristics t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit i dr continuous reverse drain - - - 21 a current i drm pulsed reverse drain current - - - 84 a v sd diode forward voltage i f = 21 a ; v gs = 0 v - 0.9 1.8 v t rr reverse recovery time i f = 21 a; -di f /dt = 100 a/ m s; - 60 - ns q rr reverse recovery charge v gs = 0 v; v r = 30 v - 0.25 - m c march 1996 2 rev 1.000
philips semiconductors product specification powermos transistor BUK444-60H avalanche limiting value t hs = 25 ?c unless otherwise specified symbol parameter conditions min. typ. max. unit w dss drain-source non-repetitive i d = 41 a ; v dd 25 v ; - - 100 mj unclamped inductive turn-off v gs = 10 v ; r gs = 50 w energy fig.1. normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t hs ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t hs ); conditions: v gs 3 10 v fig.3. safe operating area. t hs = 25 ?c i d & i dm = f(v ds ); i dm single pulse; parameter t p fig.4. transient thermal impedance. z th j-hs = f(t); parameter d = t p /t 0 20 40 60 80 100 120 140 ths / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound buk474-60h 0.1 1 10 100 1000 vds / v id / a 1000 100 10 1 0.1 100 us 1 ms 10 ms 100 ms tp = 10 us rds(on) = vds/id dc 0 20 40 60 80 100 120 140 ths / c id% normalised current derating 120 110 100 90 80 70 60 50 40 30 20 10 0 with heatsink compound 1e-07 1e-05 1e-03 1e-01 1e+01 0.001 0.01 0.1 1 10 0 0.2 0.1 0.05 0.02 0.5 buk474-60h tp / sec zth(j-hs) k/w d = t p t p t t p t d d = march 1996 3 rev 1.000
philips semiconductors product specification powermos transistor BUK444-60H fig.5. typical output characteristics, t j = 25 ?c . i d = f(v ds ); parameter v gs fig.6. typical on-state resistance, t j = 25 ?c . r ds(on) = f(i d ); parameter v gs fig.7. typical transfer characteristics. i d = f(v gs ) ; conditions: v ds = 15 v; parameter t j fig.8. typical transconductance, t j = 25 ?c . g fs = f(i d ); conditions: v ds = 15 v fig.9. normalised drain-source on-state resistance. a = r ds(on) /r ds(on)25 ?c = f(t j ); i d = 20 a; v gs = 10 v fig.10. gate threshold voltage. v gs(to) = f(t j ); conditions: i d = 1 ma; v ds = v gs 0246810 0 10 20 30 40 50 60 70 80 6 7 8 10 15 20 buk474-60h vds / v id / a vgs / v = 9 5 0 1020304050607080 0 5 10 15 20 buk474-60h id / a gfs / s tj / c = -40 25 150 0 1020304050607080 0 0.05 0.1 0.15 0.2 8 9 10 20 buk474-60h id / a rds(on) / ohm 7 5 vgs / v = 6 -60 -40 -20 0 20 40 60 80 100 120 140 tj / c a normalised rds(on) = f(tj) 1.5 1.0 0.5 0 024681012 0 10 20 30 40 50 60 70 80 buk474-60h vgs / v id / a tj / c = -40 25 150 -60 -40 -20 0 20 40 60 80 100 120 140 tj / c vgs(to) / v 4 3 2 1 0 max. typ. min. march 1996 4 rev 1.000
philips semiconductors product specification powermos transistor BUK444-60H fig.11. sub-threshold drain current. i d = f(v gs) ; conditions: t j = 25 ?c; v ds = v gs fig.12. typical capacitances, c iss , c oss , c rss . c = f(v ds ); conditions: v gs = 0 v; f = 1 mhz fig.13. typical turn-on gate-charge characteristics. v gs = f(q g ); conditions: i d = 41 a; parameter v ds fig.14. typical reverse diode current. i f = f(v sds ); conditions: v gs = 0 v; parameter t j fig.15. normalised avalanche energy rating. w dss % = f(t hs ); conditions: i d = 41 a fig.16. avalanche energy test circuit. 0 1 2 3 4 vgs / v id / a 1e-01 1e-02 1e-03 1e-04 1e-05 1e-06 sub-threshold conduction typ 2 % 98 % 0 0.5 1 1.5 2 0 10 20 30 40 50 60 70 80 buk474-60h vsds / v if / a tj / c = -40 25 150 0.01 0.1 1 10 100 100 1000 10000 buk474-60h vds / v c / pf ciss coss crss 20 40 60 80 100 120 140 ths / c 120 110 100 90 80 70 60 50 40 30 20 10 0 wdss% 0 10203040 0 2 4 6 8 10 12 buk474-60h qg / nc vgs / v 48 vds / v = 12 l t.u.t. vdd rgs r 01 vds -id/100 + - shunt vgs 0 w dss = 0.5 li d 2 bv dss /( bv dss - v dd ) march 1996 5 rev 1.000
philips semiconductors product specification powermos transistor BUK444-60H mechanical data dimensions in mm net mass: 2 g fig.17. sot186; the seating plane is electrically isolated from all terminals. notes 1. observe the general handling precautions for electrostatic-discharge sensitive devices (esds) to prevent damage to mos gate oxide. 2. refer to mounting instructions for f-pack envelopes. 3. epoxy meets ul94 v0 at 1/8". 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 seating plane 7.9 7.5 17 max 0.55 max 1.3 13.5 min 2.54 5.08 0.9 0.7 12 3 m 0.4 top view 3.5 max not tinned 4.4 march 1996 6 rev 1.000
philips semiconductors product specification powermos transistor BUK444-60H definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. philips electronics n.v. 1996 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. march 1996 7 rev 1.000
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